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Direkt Թ Inhalt

Publikationen IAP

  • S. Shams, I. Ratschinski, D. Hiller, „Atomic layer deposition of HfO2 as a charge-lean capping layer material for SiO2-modulation acceptor doping of silicon“, J. Appl. Phys. 137, 064301 (2025),

  • Hennig, J.; Klier, J.; Duran, S.; Hsu, K.-S.; Beyer, J.; Röder, C.; Beyer, F. C.; Schüler, N.; Vieweg, N.; Dutzi, K.; Freymann, G. v.; Molter, D. : Optics Express 32 (2024) 21028-21041, DOI:.
  • A. Stapf, N. Zomack, C. Bellmann, N. Schubert, A. Neumann, F. Buchholz, T. Kollek, A. Helfricht, M. Mohammadi, A. Weber, M. Müller, E. Kroke, "Aqueous HF-(HCl)-Cl2 Mixtures for Saw-Damage Removal and Spray Texturing of Monocrystalline Silicon Solar Cells", in IEEE Journal of Photovoltaics, vol. 14, no. 3, pp. 414-421, May 2024, doi: 10.1109/JPHOTOV.2024.3380447
  • D. Hiller, F. Munnik, J. López-Vidrier, D. Solonenko, J. Reif, M. Knaut, O. Thimm, N. E Grant, “Comparison of three titanium-precursors for atomic-layer-deposited TiO2 for passivating contacts on silicon”, J. Vac. Sci. Technol. A 42, 032406 (2024)
  • D. König, Y. Bian, L. Fu, D. Hiller, S. C. Smith, “Intrinsic Optimum Thermodynamic Shapes of Zincblende‐and Diamond‐Structure Nanowire Cross‐Sections”, Advanced Theory and Simulations, 2400368 (2024)
  • M. Greben, D. Hiller, J. López-Vidrier, L. López-Conesa, S. Gutsch, M. Zacharias, S. Dyakov, J. Valenta, “Barrier-dependent photoluminescence of silicon nanocrystals in quadlayer samples: Inter-layer Si diffusion or excitonic energy transfer?”, Thin Solid Films 803, 140456 (2024)
  • P. Häussermann, N.B. Joseph, D. Hiller, “Leveraging Bayesian Optimization Software for Atomic Layer Deposition: Single-Objective Optimization of TiO2 Layers”, Materials 17, 5019 (2024)
  • J. Heitmann, F. Beyer, D. Hiller, T. Mchedlidze, M. Müller, “Gettering and Defect Engineering in Semiconductor Technology (GADEST 2024)”, physica status solidi (a) 221, 2400631 (2024)
  • S. Nagarajan, I. Ratschinski, S. Schmult, S. Wirth, D. König, T. Mikolajick, D. Hiller, J. Trommer, "Analyzing Carrier Density and Hall Mobility in Impurity-Free Silicon Virtually Doped by External Defect Placement", Adv. Funct. Mater. 2415230 (2024),
  • K.E. Falidas, K. Kühnel, M. Everding, M. Czernohorsky, J. Heitmann. "Influence of ALD pulse times and deposition temperature on electrical properties and reliability of MIM decoupling capacitors based on Al-doped ZrO2 high-κ dielectric in BEoL conditions", IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024, DOI: 10.1109/EDTM58488.2024.10512192
  • A. de Lima Ribeiro, M.C. Fuchs, S. Lorenz, C. Röder, J. Heitmann, R. Gloaguen. "Multi-sensor characterization for an improved identification of polymers in WEEE recycling", Waste Management, 178, pp. 239 - 256, (2024) DOI: 10.1016/j.wasman.2024.02.024
  • A.D.L. Ribeiro, C. Röder, M.C. Fuchs, J. Heitmann, R. Gloaguen. "A sensor network for non-invasive identification of semiconductors", Proceedings of SPIE - The International Society for Optical Engineering, 12999, art. no. 1299917 (2024). DOI: 10.1117/12.3017512
  • A.E. Viegas, K. Kuehnel, K.E. Falidas, M. Rudolph, M. Czernohorsky, J. Heitmann. "Optimizing Al Doped Hafnium Oxide in 3D Trench Capacitors for Energy Storage Applications", 2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings, (2024). DOI: 10.1109/VLSITSA60681.2024.10546398
  • J. Richter, S. Lorenz, A. Kaas, M. Fuchs, C. Röder, U.A. Peuker U.A., J. Heitmann, R. Gloaguen. "Spectral Characterization of Battery Components from Li-Ion Battery Recycling Processes", Metals, 14 (2), art. no. 147 (2024) DOI: 10.3390/met14020147
  • C. Miersch, S. Seidel, A. Schmid, T. Fuhs, J. Heitmann, F.C. Beyer. "Morphological and electrical characterization of gate recessed AlGaN/GaN high electron mobility transistor device by purge-free atomic layer etching", Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 42 (2), art. no. 022604 (2024). DOI: 10.1116/6.0003350

  • V. Garbe, S. Seidel, A. Schmid, U. Bläß, E. Meissner, and J. Heitmann. "Ultra-low resistanceAu-freeV/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs", Applied Physics Letters, 123(20), 2023. doi: 10.1063/5.0171168.
  • R. Tschagaew, C. Röder, A. Kaas and J. Heitmann, 2023 IEEE SENSORS, Vienna, Austria, 2023, pp. 1-4, doi: 10.1109/SENSORS56945.2023.10325129.
  • J. Kern, J. Heitmann, M. Müller, "Importance of the Buffer Layer Properties for the Performance of Perovskite/Silicon Tandem Solar Cells", ACS Appl. Energy Mater. vol. 6, p. 2199–2206, 2023.
  • A. Weber, M. Mohammadi, M. Trempa, T. Buck, J. Heitmann, M. Müller, "Influence of Aluminum Co-Doping on Current-Induced Degradation and Regeneration Kinetics in Boron-Doped CZ PERC Solar Cells", 50th IEEE Photovoltaic Specialists Conference, San Juan, Puerto Rico, June 2023.
  • J. Kern, J. Heitmann, M. Müller, "TCAD Investigations on the Tunneling Mechanisms and the Impact of Doping at the TCO/HTL Interface of Perovskite/Silicon Tandem Solar Cells", tandemPV, Chambéry, France, 2023.
  • G. Gaspar, F. C. Serra, J. M. Serra, K. Lobato, F. Geml, G. Hahn, J. Kern, M. Müller, L. Vines, A. Fave, "Formation of Crystalline Silicon Tunnel Junctions for Perovskite on Silicon Tandem Solar Cells", tandemPV, Chambéry, France, 2023. +  XXI Congresso da Sociedade Portuguesa de Materiais – MATERIAIS 2023, Portuguese Materials Society (SPM), Apr 2023, Guimarães, Portugal.
  • W. Veurman, J. Kern, M. Müller, R. Peibst, F. Haase, S. Kajari-Schröder, "Light dependency of IV-Hysteresis in perovskite solar cells modelled by slow - shallow trap states", International Conference on Perovskite Solar Cells and Optoelectronics (PSCO), Oxford, UK, 2023.
  • G. Gaspar, F. C. Serra, J. M. Serra, K. Lobato, F. Geml, G. Hahn, J. Kern, M. Müller, L. Vines, A. Fave, "Gas-Immersion Laser-Doped Silicon Tunnel Junctions for Multi-junction Solar Cells", European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), Lisbon, Portugal, 2023.
  • V. Garbe, S. Seidel, A. Schmid, U. Bläß, E. Meissner, J. Heitmann: "Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs", Applied Physics Letters, 123(20), 2023, doi: 10.1063/5.0171168.
  • K. E. Falidas, M. B. Everding, A. E. Viegas, M. Czernohorsky, J. Heitmann: "Automated reliability calculation of failure rate, lifetime extrapolation and prediction for embedded Metal-Insulator-Metal capacitors using an optimized Time-Dependent-Dielectric-Breakdownmodel", Microelectronics Reliability, 150, 2023, doi: 10.1016/j.microrel.2023.115191.
  • A. E. Viegas, K. Kuehnel, C. Mart, M. Czernohorsky, J. Heitmann: "Stabilizing Antiferroelectric-Like Aluminum-Doped Hafnium Oxide for Energy Storage Capacitors", Advanced Engineering Materials, 25(20), 2023, doi: 10.1002/adem.202300443.
  • S. Gersdorf, V. Schildknecht, E. Schumann, S. Seidel, B. Torger, Q. Prasser, N. Frenzel, A. Lißner, J. Heitmann, F. Mertens, G. Frisch, F. A. Plamper: "Aqueous Polyelectrolyte Electrodeposition: The Effects of Alkyl Substitution and Varying Supporting Electrolyte Concentrations on the Deposition Efficiency", ChemElectroChem, 10(17), 2023, doi:10.1002/celc.202300217.
  • K. Falidas, K. Mertens, M. Everding, M. Czernohorsky, J. Heitmann: "ZrAlxOy high-k dielectrics for MIM decoupling capacitors in the BEOL", In 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT2023-Proceedings, 2023, doi: 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134346.
  • K. E. Falidas, K. Kühnel, M. Rudolph, M. B. Everding, M. Czernohorsky, J. Heitmann: "Three-Dimensional Metal-Insulator-Metal Decoupling Capacitors with Optimized ZrO2 ALD Properties for Improved Electrical and Reliability Parameters", Materials, 15(23), 2022, doi: 10.3390/ma15238325.
  • S. Nagarajan, D. Hiller, I. Ratschinski, J. Knoch, T. Mikolajick, J. Trommer, “Evaluation of Schottky barrier height at Silicide/Silicon interface of a Silicon Nanowire with Modulation Acceptor Doped Dielectric Shell”, Device Research Conference (DRC), DOI: 10.1109/DRC58590.2023.10186934 (2023)
  • D. König, M. Frentzen, D. Hiller, N. Wilck, G. D. Santo, L. Petaccia, I. Píš, F. Bondino, E. Magnano, J. Mayer, J. Knoch, S. C. Smith, “Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures”, Adv. Physics Res. 2, 2200065 (2023)
  • I. Ratschinski, S. Nagarajan, J. Trommer, A. Luferau, M. Bilal Khan, A. Erbe, Y.M. Georgiev, T. Mikolajick, S.C. Smith, D. König, D. Hiller, “Significant Resistance Reduction in Modulation-Doped Silicon Nanowires via Aluminum-Induced Acceptor States in SiO2”, Phys. Status Solidi A 220, 2300068 (2023)
  • S. Nagarajan, D. Hiller, I. Ratschinski, D. König, S.C. Smith, T. Mikolajick, J. Trommer, “Modulation Doping of Silicon Nanowires to Tune the Contact Properties of Nano-Scale Schottky Barriers”, Adv. Mater. Interfaces 11, 2300600 (2023)
  • D. Hiller, R. Duffy, V. Georgiev, W. Weber, “Group‐IV Semiconductor Materials for Nanoelectronics and Cryogenic Electronics”, physica status solidi (a) 220, 2300429 (2023)

  • Lehninger, D.; Honeit, F.; Rafaja, D.; Klemm, V.; Röder, Ch.; Khomenkova, L.; Schneider, F.; von Borany, J.; Heitmann, J.: MRS Bulletin, May 2022, DOI:10.1557/s43577-022-00311-8.
  • Mtchedlidze, T.; Schmid, A.; Heitmann, J.: physica status solidi a (applications and material science), May 2022, DOI:10.1002/pssa.202200133.
  • Gaspar, G.; Serra, J. M.; Kern, J.; Müller, M.: “TCAD Simulation of Electrical Characteristics of Silicon Tunnel Junctions for Monolithically Integrated Silicon/Perovskite Tandem Solar Cells”, SiliconPV, Konstanz, Germany, 2022. + BHT Freiberg / Silicon Days (2022); AIP Conference Proceedings vol. 2826, p. 070001, 2023. DOI:
  • Müller, M.; Heitmann, J.; Fischer, G.: „Improving a Grey Box Model of Current-Voltage Parameters for Optimization and Fault Detection of PERC Solar Cells “, 20th European Advanced Process Control and Manufacturing (apc|m) Conference, 2022. (Oral)
  • Müller, M.; Urban, T.; Altermatt, P. P.; Heitmann, J.: „FRay – A Free From Freiberg Ray tracer for the PV community”, 2022 MRS Spring Meeting, May 2022, Honolulu, HI, USA.
  • Weber, A.; Heitmann, J.; Schmid, A.; Müller, M.: „Comparison of Light– and Carrier–Induced Degradation for LeTID–Sensitive PERC Silicon Solar Cells“, Gettering and Defect Engineering in Semiconductor Technology (GADEST) Conference, Mondsee, Austria, 2022.
  • Y. Raffel, S. De, M. Lederer, R. R. Olivo, R. Hoffmann, S. Thunder, L. Pirro, S. Beyer, T. Chohan, T. Kämpfe, K. Seidel, J.Heitmann: "Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2-Based FeFETs for In-Memory-Computing Applications", ACS Applied Electronic Materials, 4(11):5292–5300, 2022, doi:10.1021/acsaelm.2c00771
  • D. Steinbach, S. Gersdorf, J. Heitmann, F. Mertens: "Charge Transport of Coordination Polymers Containing Rhodium Paddlewheel Units", Journal of Physical Chemistry C, 126(38):16421–16428, 2022; doi: 10.1021/acs.jpcc.2c04632.
  • T. Urban, M. Müller, J. Heitmann: "Full Analysis of Series Resistance Components and Their Degradation in Temperature Cycling of PERC Solar Cells" In AIP Conference Proceedings, volume 2487, 2022, doi: 10.1063/5.0089278.
  • V. Garbe, A. Schmid, S. Seidel, B. Abendroth, H. Stöcker, P. Doering, D. C. Meyer, J. Heitmann: "Au-Free Ohmic Contacts and Their Impact on Sub-Contact Charge Carrier Concentration in AlGaN/GaN Heterostructures", Physica Status Solidi (B) Basic Research, 259(2), 2022, doi: 10.1002/pssb.202100312.
  • Y. Raffel, M. Drescher, R. Olivo, M. Lederer, R. Hoffmann, L. Pirro, T. Chohan, T. Kampfe, K. Seidel, S. De, J. Heitmann: "Three Level Charge Pumping On Dielectric Hafnium Oxide Gate", In IEEE International Integrated Reliability Workshop Final Report, volume2022-October, 2022, doi: 10.1109/IIRW56459.2022.10032750.
  • A. D. L. Ribeiro, M. C. Fuchs, S. Lorenz, C. Röder, Y. Madriz, E. Herrmann, R. Gloaguen, J. Heitmann: "Multi sensor characterization of WEEE polymers: spectral fingerprints for the recycling industry", In Proceedings of SPIE -The International Society for Optical Engineering, volume12138, 2022, doi: 10.1117/12.2632693.
  • S. Seidel, V. Garbe, A. Schmid, J. Heitmann: "High-k Gate Oxide Integration and Ohmic Contact Development for AlGaN/GaN MISHEMTs", In ECS Transactions, volume108, pages 3–18, 2022, doi: 10.1149/10802.0003ecst.
  • Y. Raffel, R. Olivo, M. Lederer, F. Muller, R. Hoffmann, T. Ali, K. Mertens, L. Pirro, M. Drescher, S. Beyer, T. Kampfe, K. Seidel, L. M. Eng, J. Heitmann: "Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination", In 2022 IEEE International Memory Workshop, IMW2022-Proceedings, 2022, doi: 10.1109/IMW52921.2022.9779277.
  • A. Viegas, K. Falidas, T. Ali, K. Kuhnel, R. Hoffmann, C. Mart, M. Czernohorsky, J. Heitmann: "Reliability of Ferroelectric and Antiferroelectric Si:HfO2 materials in 3D capacitors by TDDB studies", In IEEE International Reliability Physics Symposium Proceedings, volume2022-March, pages P471–P475, 2022, doi: 10.1109/IRPS48227.2022.9764517.
  • K. Falidas, K. Mertens, R. Hoffmann, M. Czernohorsky, J. Heitmann: "Al2O3-HfO2 mixed high-k dielectrics for MIM decoupling capacitors in the BEOL", In 2022 International Symposiumon VLSI Technology, Systems and Applications, VLSI-TSA2022, 2022, doi: 10.1109/VLSI-TSA54299.2022.9770977.
  • D. König, D. Hiller, S. C. Smith, “Absorption and Photoluminescence of Silicon Nanocrystals Investigated by Excited State DFT: Role of Embedding Dielectric and Defects”, Phys. Status Solidi B 259, 2100549 (2022)

     

2021

  • Min, B.; Müller, M.; Wolpensinger, B.; Fischer, G.; Palinginis, P.; Neuhaus, D. H.; Brendel, R.: IEEE J. Photovolt., Volume 11(4), p. 908–913, 2021, DOI:10.1109/JPHOTOV.2021.3068603
  • Urban, T.; Müller, M.; Heitmann, J.: “Full Analysis of Series Resistance Components and Their Degradation in Temperature Cycling of PERC Solar Cells”, AIP Conference Proceedings 2487, 100003, 2022 (SiliconPV conference, 2021). DOI:10.1063/5.0089278.
  • Wehmeier, N.; Fischer, G.; Herlufsen, S.; Wolny, F.; Wagner, M.; Bothe, K.; Müller, M.: IEEE J. Photovolt., Volume 11(4), p. 890–896, 2021, DOI:10.1109/JPHOTOV.2021.3066239
  • Schwanke, S.; Trempa, M.; Schuck, K.; Kranert, C.; Müller, M.; Reimann, C.; Kuczynski, M.; Schroll, G.; Sans, J.; Stenzenberger, J.; Hesse, K.; Heitmann, J.; Friedrich, J.: J. Cryst. Growth, Volume 574, p. 126304, 2021, DOI:10.1016/j.jcrysgro.2021.126304
  • Sabater, A. A.; Fell, A.; Brand, A. A.; Müller, M.; Greulich, J. M.: IEEE J. Photovolt., Volume 11(5), pp. 1136–1140, Sept. 2021, DOI:10.1109/JPHOTOV.2021.3082402
  • Fischer, G.; Mohnsen, H.-W.; Heitmann, J.; Müller, M.: „A Gaussian Process Regression Metamodel for Pattern Recognition in Current-Voltage Parameters of PERC Solar Cells“ 1st Virtual European Advanced Process Control and Manufacturing (apc|m) conference, 2021
  • Fischer, G.; Klose, K.; Kleint, T.; Stöcker, H.; Beyer, J.; Heitmann, J.; Müller, M.: Proc. 38th EU PVSEC, pp. 430–432, 2021. ISBN: 3-936338-78-7. DOI:10.4229/EUPVSEC20212021-3BV.1.11
  • Zimmermann, F.; Beyer, J.; Röder, Ch.; Beyer, F. C.; Richter, E.; Irmscher, K.; Heitmann, J.: physica status solidi a, August 2021, DOI;10.1002/pssa.202100235.
  • Zimmermann, F.; Beyer, J.; Beyer, F. C.; Gärtner, G.; Gamov, I.; Irmscher, K.; Richter, E.; Weyers, M.; Heitman, J.: Journal of Applied Physics, Volume 130, Issue 5, 055703, July 2021; DOI:10.1063/5.0053940
  • Fuchs, M. C.; Beyer, J.; Lorenz, S.; Sharma S.; Renno, A. D.; Heitmann, J.; Gloaguen, R.: Earth System Science Data, DOI:10.5194/essd-2020-296.
  • Graf, L.; Ortstein, K.; Doctor, L. P.; Naumann, M.; Beyer, J.; Heitmann, J.; Leo, K.; Knupfer, M.: AIP Advances, Volume 11, Issue 2, February 2021, DOI:10.1063/5.0037958.
  • Seidel, S.; Schmid, A.; Miersch, Ch.; Schubert, J.; Heitmann, J.: , Applied Physical Letters, Volume 118, Issue 5, January 2021, DOI:10.1063/5.0037692.
  • S. Schwanke, M. Trempa, C. Reimann, M. Kuczynski, G. Schroll, J. Sans, J. Heitmann, J.Friedrich: "Influence of crucible properties and Si3N4-coating composition on the oxygen concentration in multi-crystalline silicon ingots", Journal of Crystal Growth, 568-569, 2021, doi: 10.1016/j.jcrysgro.2021.126178.

2020 

  • Müller, M.; Wolpensinger, B.; Min, B.; Fischer, G.; Palinginis, P.; Neuhaus, D. H.: IEEE Journal of Photovoltaics, Volume 10, Number 6, pp. 1642-1647, November 2020, DOI:10.1109/JPHOTOV.2020.3026978.
  • Müller, M.; Weber, A.; Kropp, A.I.; Ehrl, M.; Urban, T.; Häussermann, P.; Neubert, B.; Albrecht, A.; Seidel, S.; Otto, R.; Dadzis, K.; Menzel, R.; Trempa, M.; Kranert, C.; Reimann, C.; Heitmann, J.: 37th European Photovoltaic Solar Energy Conference and Exhibition, pp. 449-451, September 2020, ISBN:3-936338-73-6, DOI:10.4229/EUPVSEC20202020-2DV.2.10.
  • Fischer, G.; Wolny, F.; Neuhaus, H., Müller, M.: 37th European Photovoltaic Solar Energy Conference and Exhibition, pp. 238-241, September 2020, ISBN:3-936338-73-6, DOI:10.4229/EUPVSEC20202020-2CO.13.2.
  • Fischer, G.; Beyer, J.; Müller, L.; Jarosz, A.; Heitmann, J.; Müller, M.: 37th European Photovoltaic Solar Energy Conference and Exhibition, pp. 678-681, September 2020, ISBN:3-936338-73-6, DOI:10.4229/EUPVSEC20202020-3BV.1.32.
  • Lange, S.; Hensel, S.; Hähnel, A.; Naumann, V.; Urban, T.; Müller, M.; Hagendorf, C.: Phys. Status Solidi A, Volume 218, Issue 2, November 2020, DOI:10.1002/pssa.202000520.
  • Dadzis, K.; Menzel, R.; Juda, U.; Irmscher, K.; Kranert, C.; Müller, M.; Ehrl, M.; Weingärtner, R.; Reimann, C.; Abrosimov, N.; Riemann, H.: Topical Collection: 18th Conference on Defects (DRIP XVIII), Journal of Electronic Materials, Volume 49, pages 5120–5132, July 2020, DOI:10.1007/s11664-020-08309-1, open access.
  • Sharma, S. K.; Behm, Th.; Köhler, Th.; Beyer, J.; Gloaguen, R.; Heitmann, J.: , MDPI crystals, Volume 10, Number 7, July 2020, DOI:10.3390/cryst10070593, open access.
  • Khomenkova, L.; Lehninger, D.; Agocs, E.; Petrik, P.; Portier, X.; Korsunska, N.; Melnichuk, O.; Gourbilleau, F.; Heitmann J.: , ECS Transactions, Volume 97, Number 1, April 2020. DOI:10.1149/09701.0049ecst.
  • Sharma, S. K.; Beyer, J.; Gloaguen, R.; Heitmann, J.: Phys. Chem. Chem. Phys., April 2020. DOI:10.1039/D0CP01561J.

2019 

  • Urban, T.; Heitmann, J.; Müller, M.: , Physica Status Solidi A, 20219. DOI: 10.1002/pssa.201900600.
  • Fischer, G.; Dastgheib-Shirazi, A.; Terheiden, B.; Müller, M.: , AIP Conference Proceedings, Volume 2147, Issue 1, Page 070003, 2019. DOI: 10.1063/1.5123864.
  • Tratnikov, M.; Müller, M.: , AIP Conference Proceedings, Volume 2147, Issue 1, Page 020018, 2019. DOI: 10.1063/1.5123823.
  • Urban, T.; Mette, A.; Müller, M.; Heimann, J.: , IEEE Journal of Photovoltaics, Volume 9, Issue 5, Page 1360-1365, 2019. DOI: 10.1109/JPHOTOV.2019.2925551.
  • Richter, E.; Beyer, C. F.; Zimmermann, F.; Gärtner, G.; Irmscher, K.; Gamov, I.; Heitmann, J.; Weyers, M.; Tränkle, G.: Crystal Research&Technology, 2019, DOI:10.1002/crat.201900129.
  • Sharma, S. K.; Beyer, J.; Gloaguen R.; Heitmann, J.: Phys. Chem. Chem. Phys., Volume 21, 25669-25677, 2019, DOI: 10.1039/C9CP05663G.
  • Lukin, G.; Schneider, T.; Förste, M.; Barchuk, M.; Schimpf, C.; Röder, C.; Zimmermann, F.; Niederschlag, E.; Pätzold, O.; Beyer F. C.; Rafaja, D.; Stelter, M.: Journal of Crystal Growth, Volume 524, 125185, 2019, DOI: 10.1016/j.jcrysgro.2019.125185.
  • Sharma, S. K.; Köhler, Th.; Beyer, J.; Fuchs, M.; Gloaguen, R.; Heitmann, J.: Phys. Chem. Chem. Phys., Volume 21, 16329-16336, 2019, DOI: 10.1039/C9CP03501J.
  • Beyer, J.; Schüler, N.; Erlekamp, J.; Kallinger, B.; Berwian, P.; Dornich, K.; Heitmann, J.: Materials Science Forum, Volume 963, 313-317, 2019, DOI:10.4028/www.scientific.net/MSF.963.313.
  • Sharma, S. K.; Bettinelli, M.; Carrasco I.; Beyer J.; Gloaguen, R.; Heitmann, J.: J. Phys. Chem. C, 2019, 123, 23, 14639-14646, DOI:10.1021/acs.jpcc.9b02210.
  • Seidel, P.; Lorenz, S.; Heinig, Th.; Zimmermann, R.; Booysen, R.; Beyer, J.; Heitmann, J.; Gloaguen, R.: Sensors, Volume 19, Issue 10, 2019, DOI:10.3390/s19102219.
  • Wolny, F.; Krause, A.; Müller, M.; Fischer, G.; Neuhaus, H.: , Journal of Crystal Growth, Volume 514, 2019, DOI:10.1016/j.jcrysgro.2019.02.055.
  • Lorenz, S.; Beyer, J.; Fuchs, M.; Seidel, P.; Turner, D.; Heitmann, J.; Gloaguen, R.: , Remote Sensing, Volume 11, Issue 1, 2019. DOI:10.3390/rs11010021.

2018 

  • Zimmermann, F.; Gärtner, G.; Sträter, H.; Röder, C.; Barchuk, M.; Bastin, D.; Hofmann, P.; Krupinski, M.; Mikolajick, T.; Heitmann J.; Beyer, F.C.: , Journal of Luminescence, Volume 207, 507-511, March 2019. DOI:10.1016/j.jlumin.2018.11.044.
  • Müller, M.; Wagner, M.; Krause, A.; Neuhaus, D.H.: , AIP Conference Proceedings, 1999, 020020, August 2018. DOI:10.1063/1.5049259.
  • Müller, M.; Ehrl, M.; Heitmann, J.: , AIP Conference Proceedings, 1999, 090002, August 2018. DOI:10.1063/1.5049259.
  • Nekarda, J.-F.; Brand, A.; Linse, M.; Clement, F.; Schneider, J.; Turek, M.; Großer, S.; Schoenfelder, S.; Urban. T.; Ehrl. M.; Müller. M.; Heitmann, J.; Yüce. C.; Willenbacher, N.; Große, T.; Böhme, R.; König, M.; Frintrup, H.; Fuss-Kailuweit, P.; Kersten, F.; Mette, A.; Müller, J.W.; Preu, R.: , EUPVSEC Proceedings, 2018, ISBN:3-936338-50-7. DOI:10.4229/35thEUPVSEC20182018-2DV.3.66.
  • Müller, M.; Wolny, F.; Fischer, G.; Krause, A.; Palinginis, P.; Neuhaus, D.H.: , EUPVSEC Proceedings, 2018. ISBN:3-936338-50-7. DOI:10.4229/35thEUPVSEC20182018-2BO.3.3.
  • Lehninger, D.; Beyer, J.; Heitmann, J.: , physica status solidi (a), 2018. DOI:10.1002/pssa.201701028.
  • Seidel, S.; Rebohle, L.; Prucnal, S.; Lehninger, D.; Hübner, R.; Klemm, V.; Skorupa, W.; Heitmann, J.: , Thin Solid Films, 645, 124-128, 2018. DOI:10.1016/j.tsf.2017.10.029.
  • Fell, A.; Schön, J.; Müller, M.; Wöhrle, N.; Schubert, M. C.; Glunz S. W.: , IEEE Journal of Photovoltaics, Volume: 8, Issue: 2, March 2018. DOI:10.1109/JPHOTOV.2017.2787020.

2017 

  • Urban, T.; Turek, M.; Großer, S.; Hagendorf, C.; Heitmann, J.: , 33rd European Photovoltaic Solar Energy Conference and Exhibition, 1705-1708 (2017). DOI: 10.4229/EUPVSEC20172017-5BV.4.71
  • Urban, T.; Krügel, K.; Heitmann, J.: , Energy Procedia, 124, 930-935 (2017). DOI: 10.1016/j.egypro.2017.09.271.
  • Min, B.; Wagner, H.; Müller, M.; Fischer, G.; Brendel, R.; Altermatt, P. P.; Neuhaus, H.: , IEEE Journal of Photovoltaics, 7, 1541–1550 (2017). DOI:10.1109/JPHOTOV.2017.2749007.
  • Lukin, G.; Schneider, T.; Barchuk, M.; Zimmermann, F.; Niederschlag, E.; Pätzold, O.; Stelter, M.: , Physica Status Solidi A, 1600753 (2017). DOI: 10.1002/pssa.201600753.
  • Schneider, T.; Lukin, G.; Zimmermann, F.; Barchuk, M.; Niederschlag, E.; Pätzold, O.; Stelter, M.: , Journal of Crytsal Growth, 468,212 (2017). DOI:10.1016/j.jcrysgro.2016.10.080.
  • Zimmermann, F.; Beyer, F. C.; Gärtner, G.; Röder, C.; Son, N. T.; Janzén, E.; Veselá, D.; Lorincik, J.; Hofmann, P.; Krupinski, M.; Mikolajick, T.; Habel, F.; Leibiger, G.; Heitmann, J.: , Optical Materials, 70, 127 (2017). DOI:10.1016/j.optmat.2017.05.020.
  • Fell, A.; Sträter, H.; Müller, M.; Steinkemper, H.; Schön, J.; Hermle, M.; Schubert, M. C.; Neuhaus, D. H.; Glunz, S. W.: "Modeling of edge recombination losses in half-cells", in Proc. 33rd EU PVSEC, Amsterdam, Netherlands (2017).
  • Min, B.; Kruse, C.; Schinke, C.; Wolf, M.; Müller, M.; Sträter, H.; Wagner, M.; Bothe, K.; Brendel, R.: , Energy Procedia, 124, 120–125 (2017). DOI:10.1016/j.egypro.2017.09.324.
  • Min, B.; Krügener, J.; Müller, M.; Bothe, K.; Brendel, R.: , Energy Procedia, 124, 126–130 (2017). DOI: 10.1016/j.egypro.2017.09.323.
  • Wolny, F.; Müller, M.; Krause, A.; Neuhaus, D. H.: , Energy Procedia, 124, 235–239 (2017). DOI:10.1016/j.egypro.2017.09.264.
  • Müller, M.; Fischer, G.; Bitnar, B.; Steckemetz, S.; Schiepe, R.; Mühlbauer, M.; Köhler, R; Richter, P.; Kusterer, C.; Oehlke, A.; Schneiderlöchner, E.; Sträter, H.; Wolny, F.; Wagner, M.; Palinginis, P.; Neuhaus, D. H.: , Energy Procedia, 124, 131–137 (2017). DOI:10.1016/j.egypro.2017.09.322.
  • Lehninger, D.; Rafaja, D.; Wünsche, J.; Schneider, F.; von Borany, J. and Heitmann, J.: , Applied Physics Letters, 110, 262903 (2017). DOI: 10.1063/1.4990529.
  • Agocs, E.; Zolnai, Z.; Rossall, A. K.; van den Berg, J. A.; Fodor, B.; Lehninger, D.; Khomenkova, L.; Ponomaryov, S.; Gudymenko, O.; Yukhymchuk, V.; Kalas, B.; Heitmann, J.; Petrik, P.: , Applied Surface Science, 421, 283-288 (2017). DOI: 10.1016/j.apsusc.2017.03.153.
  • Urban, T.; Krügel, K.; Heitmann, J.: "Formation of AgAl Alloy in Context of PERC Solar Cell Metallization.", Poster, SiliconPV - 7th International Conference on Crystalline Silicon Photovoltaics, Freiburg, Germany 2017, Energy Procedia (submitted).
  • Kersten, F.; Fertig, F.; Petter, K.; Klöter, B.; Herzog, E.; Strobel, M.; Heitmann, J.; Müller, J. W.: , Präsentation, SiliconPV - 7th International Conference on Crystalline Silicon Photovoltaics, Freiburg, Germany 2017, Energy Procedia (submitted).
  • Lantzsch, R.; Mohr, A.; Schaper, M.; Bartzsch, M.; Wissen, D.; Mette, A.; Peters, S.; Eidner, A.; Kersten, F.; Schütze, M.; Cieslak, J.; Duncker, K.; Junghänel, M.; Jarzembowski, E.; Kauert, M.; Geißler, S.; Hörnlein, S.; Klenke, C.; Niebergall, L.; Schönmann, A.; Weihrauch, A.; Hofmann, A.; Rudolph, T.; Schwabedissen, A.; Gundermann, M.; Müller, J. W.; Jeong, D.J.W.: , Präsentation, SiliconPV - 7th International Conference on Crystalline Silicon Photovoltaics, Freiburg, Germany 2017, Energy Procedia (submitted).
  • Khomenkova, L.; Lehninger, D.; Kondratenko, O.; Ponomaryov, S.; Gudymenko, O.; Tsybrii, Z.; Yukhymchuk, V.; Kladko, V.; von Borany, J.; Heitmann, J.: , Nanoscale Research Letters, 12, 196 (2017). DOI: 10.1186/s11671-017-1690-9.
  • Hofmann, R.; Schreiter, M.; Heitmann; J.: , Journal of Sensor and Sensor Systems, 6, 87-96 (2017). DOI: 10.5194/jsss-6-87-2017.
  • Wysokowski, M.; Motylenko, M.; Rafaja, D.; Koltsov, I.; Stöcker, H.; Szalaty T. J.; Bazhenov V. V.; Stelling A. L.; Beyer, J.; Heitmann, J.; Jesionowski, T.; Petovic, S.; Đurović, M.; Ehrlich, H.: , Materials Chemistry and Physics, 188, 115-124 (2017). DOI: 10.1016/j.matchemphys.2016.12.038.
  • Barchuk, M.; Lukin, G.; Zimmermann, F.; Röder, C.; Motylenko, M.; Pätzold, O.; Heitmann, J.; Kortus, J.; Rafaja, D.: , Journal of Electronic Materials, 46, 1612 (2017). DOI: 10.1007/s11664-016-5204-z.

2016 

  • Petrik, P.; Sulyok, A.; Novotny, T.; Perez-Feró, E.; Kalas, B.; Agocs, E.; Lohner, T.; Lehninger, D.; Khomenkova, L.; Nagy, R.; Heitmann, J.; Menyhard, M.; Hózer, Z.: , Applied Surface Science (2016). DOI: 10.1016/j.apsusc.2016.11.072.
  • Sohrmann, C.; Scharf, P.; Holland, S.: , Präsentation: MOS-AK, Dresden, Germany 2016.
  • Petter, K.; Hübner, K., Kersten, F.; Bartzsch, M.; Fertig, F.; Müller, J. W.: , Präsentation: 9th International Workshop on Crystalline Silicon Solar Cells & 3rd Silicon Materials Workshop, Tempe, Arizona 2016.
  • Fertig, F.; Kersten, F.; Petter, K.; Bartzsch, M.; Stenzel, F.; Mette, A.; Klöter, B.; Müller, J. W.: , Präsentation: 26th NREL Workshop on Crystalline Silicon Solar Cells & Modules, Vail, Colorado 2016.
  • Szabó, N.; Wachowiak, A.; Winzer, A.; Ocker, J.: Gärtner, J.; Hentschel, R.; Schmid, A.; Mikolajick, T.: , Journal of Vacuum Science and Technology B, 35, 01A102 (2016), DOI:10.1116/1.4967307.
  • Kersten, F.; Heitmann, J.; Müller J. W.: , Präsentation: 32nd European Photovoltaic Solar Energy Conference and Exhibition, Munich, Germany 2016.
  • Kersten, F.; Förster, I.; Peters, S.: , Poster: 32nd European Photovoltaic Solar Energy Conference and Exhibition, Munich, Germany 2016.
  • Schubert, F.; Wirth, S.; Zimmermann, F.; Heitmann, J.; Mikolajick, T.; Schmult, S.: , Science and Technology of Advanced Materials, 17, 239-243 (2016), DOI: 10.1080/14686996.2016.1178565.
  • Schicke, K.-D.; Beyer, J.; Hessenkemper, H.; Heitmann, J.: , Journal of Non-Crystalline Solids, 447, 134-140 (2016), DOI: 10.1016/j.jnoncrysol.2016.06.001.
  • Kersten, F.; Engelhart, P.; Ploigt, H.-C.; Stenzel, F.; Petter, K.; Lindner, T.; Szpeth, A.; Bartzsch, M.; Stekolnikov, A.; Scherff, M.; Müller, J. W.; Heitmann, J.: "Degradation of mc-Si Solar Cells & Modules with Dielectric Rear Side Passivation." Präsentation: Novel High-k Applications Workshop, Dresden, Germany 2016.
  • Seidel, S.; Sabelfeld, A.; Strohmeyer, R.; Schreiber, G.; Klemm, V.; Rafaja, D.; Joseph, Y.; Heitmann, J.: , Thin Solid Films, 606, 13-18 (2016), DOI: 10.1016/j.tsf.2016.03.028.
  • Kersten, F.; Heitmann, J.; Müller J. W.: , Energy Procedia 92, 828-832 (2016), DOI: 10.1016/j.egypro.2016.07.079.
  • Urban, T.; Mette, A.; Heitmann, J.: , Energy Procedia 92, 236-241 (2016), DOI:10.1016/j.egypro.2016.07.065.
  • Heitmann, J.; Schneider, F.; Schmid, A.; Lehninger, D.; Beyer, J.; Hoffmann, R.; Seidel, P.; Kersten, F.: "Glanzlichter der Forschung an der TU Bergakademie Freiberg 250 Jahre nach ihrer Gründung", Nano-crystalline Thin Film Materials for Optical and Electronic Applications, 168–175 (Chemnitz Verlag, 2016), ISBN: 978-3-944509-26-6.
  • Hofmann, P.; Röder, C.; Habel, F.; Leibiger, G.; Beyer, F. C.; Gärtner, G.; Eichler, S.; Mikolajick, T.: , Journal of Physics D: Applied Physics, 49, 075502 (2016). DOI: 10.1088/0022-3727/49/7/075502.

2015

  • Wysokowski, M.; Motylenko, M.; Beyer, J.; Makarova, A.; Stöcker, H.; Walter, J.; Galli, R.; Kaiser, S.; Vyalikh, D.; Bazhenov, V. V. et al.: , Nano Research, 8, 2288 (2015). DOI: 10.1007/s12274-015-0739-5.
  • Kersten, F.; Engelhart, P.; Ploigt, H.-C.; Stenzel, F.; Petter, K.; Lindner, T.; Szpeth, A.; Bartzsch, M.; Stekolnikov, A.; Scherff, M.; Müller, J. W. ; Heitmann, J.: , Präsentation: 12. Workshop "Photovoltaik-Modultechnik" TÜV Rheinland, Köln, Germany 2015
  • Lehninger, D.; Beyer, J.; Schneider, F.; Pawlik, A.-S.; Heitmann, J.: , Plasma Physics, 55, 714-727 (2015). DOI: 10.1002/ctpp.201510017.
  • Kersten, F.; Engelhart, P.; Ploigt, H.-C.; Stenzel, F.; Petter, K.; Lindner, T.; Szpeth, A.; Bartzsch, M.; Stekolnikov, A.; Scherff, M.; Heitmann, J.; Müller, J. W.: , Präsentation: 31st European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany 2015
  • Schmid, A.; Otto, R.; Klemm, V.; Rafaja, D.; Winzer, A.; Wachowiak, A.; Heitmann, J.: "Vanadium-based ohmic contacts to AlGaN/GaN MISHEMTs.", Präsentation: EMRS fall meeting, Warsaw, Poland 2015.
  • Hofmann, P.; Beyer, F.; Röder, C.; Gärtner, G.; Habel, F.; Leibiger, G.; Weinert, B.; Eichler, S.; Heitmann, J.; Mikolajick, Th.: "Characterization of n-type Si-doped GaN grown by HVPE." Präsentation: EMRS fall meeting, Warsaw, Poland 2015.
  • Lehninger, D.; Khomenkova, L.; Röder, C.; Gärtner, G.; Abendroth, B.; Beyer, J.; Schneider, F.; Meyer, D. C.; Heitmann, J.: , Präsentation: ECS meeting, Chicago 2015; ECS Trans., 66, 203-212 (2015), DOI: 10.1149/06604.0203ecst
  • Kersten, F.>; Engelhart, P.; Ploigt, H.-C.; Stekolnikov, A.; Lindner, Th.; Stenzel, F.; Bartzsch, M.; Szpeth, A.; Petter, K.; Heitmann, J.; Müller, J. W.: , Präsentation: 42nd IEEE PVSC New Orleans 2015.
  • Lehninger, D.; Schneider, F.; Klemm, V.; Rafaja, D.; Heitmann, J.: "Ge nanostructures embedded in ZrO2-based dielectrics for electrical applications.", Präsentation: EMRS spring meeting, Lille, France 2015.
  • Kersten, F.; Engelhart, P.; Ploigt, H.-C.; Stekolnikov, A.; Lindner, Th.; Stenzel, F.; Bartzsch, M.; Szpeth, A.; Petter, K.; Müller, J. W.; Heitmann, J.: "Degradation of multicrystalline silicon solar cells and modules after illumination at elevated temperature" Präsentation: SiliconPV - 5th International Conference on Crystalline Silicon Photovoltaics, Konstanz, Germany 2015, , DOI: 10.1016/jsolmat.2015.06.15
  • Hoffmann, R.; Beyer, J.; Klemm, V., Rafaja, D.; Johnson, B. C.; McCallum, J. C.; Heitmann, J.: , J. Appl. Phys. 117, 163106 (2015)
  • Urban, T.; Heimann, M.; Schmid, A.; Mette, A.; Heitmann, J.: , Energy Procedia, 77, 420-427 (2015), DOI 10.1016/j.egypro.2015.07.059.
  • Zimmermann, F.; Beyer, J.; Lukin, G.; Pätzold, O.; Röder, Ch.; Stelter, M.; Heitmann, J.: , Präsentation: DPG-Tagung Berlin 2015.
  • Lehninger, D.; Geyer, M.; Schneider, F.; Klemm, V.; Rafaja, D.; Heitmann, J.: , Präsentation: DPG-Tagung Berlin 2015.
  • Hoffmann, R.; Beyer, J.; Klemm, V.; Rafaja, D.; Johnson, B.; Jeffery, C.M.; Heitmann, J.: , Präsentation: DPG-Tagung Berlin 2015.
  • Lehninger, D.; Geyer, M.; Schneider, F.; Klemm, V.; Rafaja, D.; Himcinschi, C.; Heitmann, J.: "Charge trapping of Ge-nanoparticles embedded in ZrO2 based high-K dielectrics." Präsentation: Novel High k Applications Workshop, Dresden, Germany 2015.
  • Schubert, F.; Zybell, S.; Heitmann, J.; Mickolajick, Th.; Schmult, S.: , Journal of Crystal Growth 02/2015, DOI:10.1016/j.crysgro.2015.02.037.
  • Schmid, A.; Schröter, Ch.; Otto, R.; Schuster, M.; Klemm, V.; Rafaja, D.; Heitmann, J.: , Appl. Phys. Lett., 106, 053509 (2015)
  • Lehninger, D.; Seidel, P.; Geyer, M.; Schneider, F.; Klemm, V.; Rafaja, D.; von Borany, J.; Heitmann, J.: , Appl. Phys. Lett., 106, 023116 (2015)

2014

  • Booker, I.D.; Hassan, J.U.; Lilja, L.; Beyer, F. C.; Karhut, R.; Bergmann, J.P.; Danielsson, Ö.; Kordina, O.; Sveinbjörnsson; Janzén, E.: , Contribution to Crystal Growth and Design: 14: 4104-4110 (2014), DOI: 10.1021/cg5007154
  • Winzer, A.; Szabó, N.; Wachowiak, A.; Jordan, P. M.; Heitmann, J.; Mikolajick, Th.: , J. Vac. Sci. Technol. B, 33, 01A106 (2015)
  • Schriever, C.; Bianco, F.; Cazzanelli, M.; Ghulinyan, M.; Eisenschmidt, C.; de Boor, J.; Schmid, A.; Heitmann, J.; Pavesi, L.; Schilling, J.: , Advanced Optical Materials, 2014, DOI: 10.1002/adom.20100370
  • Petter, K.; Fahrland, Ch.; Ludwig, Y.; Kersten, F.: , Präsentation:
  • Schmid, A.; Kersten, F.; Rentrop, S.; Abendroth, B.; Meyer, D.C.; Heitmann, J.: , Präsentation: and ECS Transactions 61 (2) (2014), 11-20
  • Lehninger, D.; Seidel, P.; Schneider, F.; Klemm, V.; Borany, J. von; Heitmann, J.: "Charge Trapping of Ge Nanocrystals Embedded in TaZrO2", Präsentation: MRS Spring Meeting San Francisco 2014.
  • Fahrland, Ch.; Ludwig, Y.; Kersten, F.; Petter, K.: , Präsentation: 40th IEEE PVSC Denver 2014.
  • Krause, A.; Weber, W. A.; Schroeder, U.; Heitmann, J.; Mikolajick, Th.: , Poster: DPG-Tagung Dresden 2014.
  • Sabelfeld, A.; Seidel, S.; Nestler, T.; Otto, R.; Heitmann, J.; Joseph, Y.: , Poster:
  • Geyer, M.; Seidel, P.; Lehninger, D.; Klemm, V.; Schreiber, G.; Heitmann, J.: , Präsentation: DPG-Tagung Dresden 2014
  • Lehninger, D.; Seidel, P.; Schneider, F.; Klemm, V.; Borany, J. von; Heitmann, J.: , Präsentation: DPG-Tagung Dresden 2014.
  • Pawlik, A.-S.; Beyer, J.; Seidel, P.; Geyer, M.; Heitmann, J.: , Präsentation: DPG-Tagung Dresden 2014.
  • Schröter, Ch.; Schmid, A.; Klemm, V.; Heitmann, J.: , Präsentation: DPG-Tagung Dresden 2014
  • Zimmermann, F.; Beyer, J.; Habel, F.; Leibiger, G.; Weinert, B.; Krupinski, M.; Hofmann, P.; Heitmann, J.: , Präsentation: DPG-Tagung Dresden 2014.

2013

  • Kersten, F.; Schmid, A.; Bordihn, S.; Müller, J. W.; Heitmann, J.: , Energy Procedia, 38, 843-848 (2013). DOI: 10.1016/j.egypro.2013.07.354.
  • Seidel, P.; Geyer, M.; Lehninger, D.; Schneider, F.; Klemm, V.; Heitmann, J.: , ECS Transactions, 53 (1) (2013), 237-243
  • Krupinski, M.; Kasic, A.; Hecht, T.; Klude, M.; Erben, E.; Heitmann, J.; Mikolajick, T.: , IEEE Trans. on Semicond. Manufacturing, 26 (2), 6478839 (2013), 253-259.
  • Weinreich, W.; Wilde, L.; Mueller, J.; Sundqvist, J.; Erben, E.; Heitmann, J.; Lemberger, M.; Bauer, A. J.: , J. Vac. Sci. Techno. A: Vacuum, Surfaces, and Films, 31 (1) (2013), 01A119/1-01A119/9.
  • Haas, S.; Schneider, F.; Himcinschi, C.; Klemm, V.; Schreiber, G.; Borany, J. von; Heitmann, J.: , J. Appl. Phys., 113 (2013), 044303.

2012

  • Bordihn, S.; Mertens, V.; Engelhart, P.; Kersten, F.; Mandoc, M.M.; Müller, J.W.; Kessels, W.M.M.: , ECS J. Solid State Sci. Technol., 1 (6) (2012), P320-P325
  • Benner, F.; Haas, S.; Schneider, F.; Klemm, V.; Schreiber, G.; Borany, J. von; Mikolajick, T.; Heitmann, J.: , ECS J. Solid State Sci. Technol., 1 (6) (2012), N135-N138.
  • Müller, J.; Polakowski, P.; Olsen, T.; Müller, S.; Schröder, U.; Heitmann, J.: "Stabilization of ferroelectric HfO2: The impact of mechanical encapsulation.", Präsentation: E-MRS Strasbourg, Spring Meeting 2012.
  • Benner, F.; Haas, S.; Schneider, F.; Klemm, V.; Schreiber, G.; von Borany, J.; Heitmann, J.: , Präsentation: ECS 221st Meeting Seattle 2012, veröffentlicht in: , DOI: 10.1149/1.3700867
  • Weinreich, W.; Wilde, L.; Müller, J.; Erben, E.; Heitmann, J.; Lemberger, M.; Bauer: "Structural properties of ZrO2 after deposition and PDA influenced by ALD, substrate, and doping.", Präsentation: ALD conference Dresden 2012.

2011

  • Krupinski, M.; Kasic, A.; Hecht, T.; Klude, M.; Heitmann, J.; Erben, E.; Mikolajick, T.: "Optical characterization of three-dimensional structures within a DRAM capacitor.", Poster: SPIE München 2011.
  • Krause, A.; Weber, W. M.; Schröder, U.; Pohl, D.; Rellinghaus, B.; Heitmann, J.; Mikolajick, T.: , Appl. Phys. Lett., 99 (2011), 222905.
  • Krause, A.; Weber, W.; Jahn, A.; Richter, K.; Pohl, D.; Rellinghaus, B.; Schröder, U.; Heitmann, J.; Mikolajick, T.: , J. Vac. Science and Techn. B 29 (2011), DOI: 10.1116/1.3521507
  • Martin, D.; Grube, M.; Weinreich, W.; Müller, J.; Wilde, L.; Erben, E.; Weber, W.; Heitmann, J.; Schröder, U.; Mikolajick, T.; Riechert, H.: , J. Vac. Science and Techn. B 29 (1) (2011), DOI: 10.1116/1.3523397
  • Martin, D.; Grube, M.; Reinig, P.; Oberbeck, L.; Heitmann, J.; Weber, W. M.; Mikolajick, T.; Riechert, H.: , Appl. Phys. Lett., 98 (2011), DOI: 10.1063/1.3533802
  • Geyh, M. A.; Krbetschek, M. R.: "Zum radiometrischen Alter des Holstein-Interglazials. Forschungen zur Urgeschichte im Tagebau von Schöningen 1.", (zur Veröffentlichung angenommen).
  • Lang, S.; Hornung, J.; Krbetschek, M.; Ruckwied, K.; Hoppe, A.: "Der Ablagerungsraum am Rand des Oberrheingrabens in Darmstadt im Mittel- und Oberpleistozän.", Geologisches Jahrbuch Hessen, Band 137.
  • Krbetschek, M. R.: "Sediment age determination by luminescence methods.", In: Sirocko, F.: The stratigraphic framework of the Eifel dry maar drilling project. Quaternary Sciences Reviews (submitted)
  • Lauer, T.; Frechen, M.; Klostermann, J.; Krbetschek, M.; Schollmayer, G.; Tsukamoto, S.: "Luminescence dating of Last Glacial and Early Holocene uvial deposits from the Lower Rhine – methodological aspects and chronological framework.", Z. dt. Ges. Geowiss. 162/1, 47-61.
  • Lauer, T.; Krbetschek, M.; Frechen, M.; Tsukamoto, S.; Hoselmann, C.; Weidenfeller, M.: , Geochronometria, DOI 10.2478/s13386-011-0006-9.
  • Schirrmeister, L.; Grosse, G.; Schnelle, M.; Fuchs, M.; Krbetschek M. R.; Ulrich, M.; Kunitsky, V.; Grigoriev, M.; Andreev, A.; Kienast, F.; Meyer, H.; Babiy, O.; Klimova, I.; Bobrov, A.; Wetterich, S., Schwamborn, G.: , Palaeogeography, Palaeoclimatology, Palaeoecology, 299 (2011), 175-196.

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